Electrical properties of MIM junctions with ultra-thin polyimide Langmuir-Blodgett films
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,General Engineering
Link
http://xplorestaging.ieee.org/ielx1/14/2014/00055729.pdf?arnumber=55729
Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Fabrication and characterization of NiO based metal−insulator−metal diode using Langmuir-Blodgett method for high frequency rectification;AIP Advances;2018-04
2. Filamentary electrical conduction in polyimide films detected by infrared thermography before thermal breakdown;Applied Physics Letters;2017-04-17
3. Space charge formation in polyimide films and polyimide/SiO2 double-layer measured by LIMM;IEEE Transactions on Dielectrics and Electrical Insulation;2017-04
4. Fabrication and Characterization of ZnO Langmuir–Blodgett Film and Its Use in Metal–Insulator–Metal Tunnel Diode;Langmuir;2016-08-09
5. Characterization of 10,12-pentacosadiynoic acid Langmuir–Blodgett monolayers and their use in metal–insulator–metal tunnel devices;Beilstein Journal of Nanotechnology;2014-11-26
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