A Novel Converter-level Online Junction Temperature Estimating Method for SiC MOSFETs Based on Bus Current Overshoot
Author:
Affiliation:
1. Tsinghua University,Department of Electrical Engineering,Beijing,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10361838/10361943/10362021.pdf?arnumber=10362021
Reference21 articles.
1. The Impact of Nonlinear Junction Capacitance on Switching Transient and Its Modeling for SiC MOSFET
2. Thermal Optimization and Characterization of SiC-Based High Power Electronics Packages With Advanced Thermal Design
3. An Online Junction Temperature Monitoring Method for SiC MOSFETs Based on a Novel Gate Conduction Model
4. Temperature-Dependent Short-Circuit Capability of Silicon Carbide Power MOSFETs
5. Review of Power Semiconductor Device Reliability for Power Converters
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