High-Frequency Bus Bars for 3-D Packaging GaN-based LLC Resonant Converter-Reference-Cited by-同舟云学术

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High-Frequency Bus Bars for 3-D Packaging GaN-based LLC Resonant Converter

Published:2023-10-29 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE Energy Conversion Congress and Exposition (ECCE)
language:
Short-container-title:

Author:

Yang Xiaoyi¹,Hsu Weijung¹,Huang Qingyun²,de Rooij Michael³,Huang Alex Q.¹

Affiliation:

1. The University of Texas at Austin,Semiconductor Power Electronics Center (SPEC),Austin,USA

2. University of Missouri,Electrical Engineering and Computer Science,Columbia,USA

3. Applications Engineering Efficient Power Conversion Corporation (EPC),El Segundo,USA

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10361838/10361943/10362186.pdf?arnumber=10362186

Reference7 articles.

1. A review of 3-D packaging technology

2. Three-dimensional packaging for power semiconductor devices and modules

3. High-Power Density, 900-W LLC Converters for Servers Using GaN FETs: Toward Greater Efficiency and Power Density in 48 V to 6\/12 V Converters

4. Optimal Design Methodlogy for LLC Resonant Converter

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