Design, Packaging, and Characterization of a 6.8kV/160A SiC SuperCascode Half-Bridge Module for Medium Voltage Applications
Author:
Affiliation:
1. The University of Texas at Austin,Semiconductor Power Electronics Center (SPEC),Austin,Texas,USA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10361838/10361943/10362553.pdf?arnumber=10362553
Reference9 articles.
1. Reliability assessment of a large population of 3.3 kV, 45 A 4H-SIC MOSFETs
2. 10 kV and 15 kV silicon carbide power MOSFETs for next-generation energy conversion and transmission systems;Pala,1963
3. Stacked high voltage switch based on SiC VJFETs
4. 15 kV SiC MOSFET: An Enabling Technology for Medium Voltage Solid State Transformers
5. A Design Investigation of A 1 MVA SiC MOSFET Medium Voltage Variable Frequency Drive With Various Filtering Options
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