Observations on Ruggedness Degradation of Planar-gate SiC MOSFETs after Total Ionizing Dose Radiation
Author:
Affiliation:
1. Hunan University,College of Electrical and Information Engineering,Changsha,China
2. Beijing Microelectronics Technology Institute,Beijing,China
3. Institute of Semiconductors CAS,Beijing,China
Funder
National Natural Science Foundation of China
Natural Science Foundation of Hunan Province
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10361838/10361943/10362840.pdf?arnumber=10362840
Reference20 articles.
1. Review of Silicon Carbide Power Devices and Their Applications
2. DAB Converter for EV On-Board Chargers Using Bare-die SiC MOSFETs and Leakage-Integrated Planar Transformer
3. An All-SiC 15 kW/L 60 kW Multiplexing Converter for Electric Vehicles
4. Short-Circuit Capability Prediction and Failure Mode of Asymmetric and Double Trench SiC MOSFETs
5. Comparison of Short Circuit Failure Modes in SiC Planar MOSFETs, SiC Trench MOSFETs and SiC Cascode JFETs
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Observations on Short-Circuit and Avalanche Robustness of Asymmetric trench-gate SiC MOSFETs after γ-ray Radiation;2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia);2024-05-17
2. Total Ionizing Dose Radiation Effect on Avalanche Robustness of 1200V Trench-type SiC Power MOSFETs;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27
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