Analysis and Suppression on High dv/dt Caused Crosstalk in Driving Paths of SiC Full-bridge Inverters
Author:
Affiliation:
1. Huazhong University of Science and Technology,Power Electronics and Energy Management Key Laboratory, Ministry of Education of China,Wuhan,China
Funder
National Natural Science Foundation of China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10361838/10361943/10362908.pdf?arnumber=10362908
Reference13 articles.
1. Wide bandgap (WBG) power devices and their impacts on power delivery systems
2. Silicon carbide benefits and advantages for power electronics circuits and systems
3. SiC versus Si—Evaluation of Potentials for Performance Improvement of Inverter and DC–DC Converter Systems by SiC Power Semiconductors
4. A Detailed Analytical Model of SiC MOSFETs for Bridge-Leg Configuration by Considering Staged Critical Parameters
5. EMI Behavioral Model Based CM Noise Prediction Method for DC Power System Considering Multi-Noise Coupling
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