Polysilicon transistors fabricated on plasma-deposited amorphous silicon-Reference-Cited by-同舟云学术

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Polysilicon transistors fabricated on plasma-deposited amorphous silicon

Published:1988-05 Issue:5 Volume:35 Page:708-710
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Ipri A.C.,Kaganowicz G.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/16/150/00002519.pdf?arnumber=2519

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Material properties of pulsed-laser crystallized Si thin films grown on yttria-stabilized zirconia crystallization-induction layers by two-step irradiation method;Japanese Journal of Applied Physics;2016-02-19

2. Improving crystalline quality of polycrystalline silicon thin films crystallized on yttria-stabilized zirconia crystallization-induction layers by the two-step irradiation method of pulsed laser annealing;Japanese Journal of Applied Physics;2015-02-18

3. Raman spectral analysis of Si films solid-phase-crystallized on glass substrates using pulse laser with crystallization-induction layers of yttria-stabilized zirconia;Japanese Journal of Applied Physics;2014-01-01

4. Low-Temperature Crystallization of Silicon Films Directly Deposited on Glass Substrates Covered with Yttria-Stabilized Zirconia Layers;Japanese Journal of Applied Physics;2010-10-20

5. Poly-Si TFTs by Non-Laser Crystallization Methods;Thin Film Transistors;2004

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