Electro- and thermomigration in micro bump interconnects for 3D integration
Author:
Affiliation:
1. Information Technology Laboratory LFI, Leibniz University Hannover, Schneiderberg 32, 30167 Hannover, Germany
2. Fraunhofer Institute for Mechanics of Materials IWM, Walter-Huelse-Straße 1, 06120 Halle (Saale), Germany
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/5871442/5898472/05898701.pdf?arnumber=5898701
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Investigation of Various Bumps and Redistribution Lines to Inhibit Protected Silicon Nitride Cracks in High Pattern Density Chip Package;Journal of Electronic Materials;2020-07-11
2. Effects of self-aligned electroplating Cu pillar/Sn-xAg bump on dense Al lines for chip-to-package connection;Materials Science in Semiconductor Processing;2016-07
3. Transition from flip chip solder joint to 3D IC microbump: Its effect on microstructure anisotropy;Microelectronics Reliability;2013-01
4. Migration induced material transport in Cu–Sn IMC and SnAgCu microbumps;Microelectronics Reliability;2011-09
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