Threshold voltage drift (PBTI) in GaN D-MODE MISHEMTs: Characterization of fast trapping components
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Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/6850132/6860565/06861111.pdf?arnumber=6861111
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Study on the Hydrogen Effect and Interface/Border Traps of a Depletion-Mode AlGaN/GaN High-Electron-Mobility Transistor with a SiNx Gate Dielectric at Different Temperatures;Micromachines;2024-01-24
2. Low concentration hydrogen detection properties of metal-insulator-semiconductor AlGaN/GaN HEMT sensor;Sensors and Actuators B: Chemical;2023-10
3. Degradation and Mechanism of D-Mode AlGaN/GaN MIS-HEMTs Under the Combination Action of Hydrogen and HTGB Stress;IEEE Transactions on Electron Devices;2023-01
4. Comparative Study of AlGaN/GaN HEMT and MOS-HEMT Under Positive Gate Bias-Induced Stress;Computers and Devices for Communication;2021
5. Time-dependent characteristics and physical mechanisms of AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors under different bias conditions;Journal of Physics D: Applied Physics;2019-09-13
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