Interface engineering of ferroelectric negative capacitance FET for hysteresis-free switch and reliability improvement-Reference-Cited by-同舟云学术

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Interface engineering of ferroelectric negative capacitance FET for hysteresis-free switch and reliability improvement

Published:2018-03 Issue: Volume: Page:
ISSN:
Container-title:2018 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Fan Chia-Chi,Tu Chun-Yuan,Lin Ming-Huei,Chang Chun-Yen,Cheng Chun-Hu,Chen Yen Liang,Liou Guan-Lin,Liu Chien,Chou Wu-Ching,Hsu Hsiao-Hsuan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8345372/8353529/08353703.pdf?arnumber=8353703

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ferroelectric memory devices using hafnium aluminum oxides and remote plasma-treated electrodes for sustainable energy-efficient electronics;Materials Research Express;2024-04-01

2. Impact of CF₄/O₂ Plasma Passivation on Endurance Performance of Zr-Doped HfO₂ Ferroelectric Film;IEEE Electron Device Letters;2023-05

3. MoS2 negative-capacitance transistors with steep slope and negligible hysteresis by using monolayer Al1-Zr O as gate dielectric plus NH3-plasma treatment;Applied Surface Science;2022-02

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