Author:
Lee Kyong Taek,Nam Jongik,Jin Minjung,Bae Kidan,Park Junekyun,Hwang Lira,Kim Jungin,Kim Hyunjin,Park Jongwoo
Cited by
8 articles.
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1. Study of voltage margin of Gate oxide TDDB between AC and DC stress;2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA);2023-07-24
2. GHz AC to DC TDDB Modeling with Defect Accumulation Efficiency Model;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03
3. CMOS 16FF Digital Power Amplifier RF Reliability Characterization;IEEE Solid-State Circuits Letters;2023
4. Stability and Reliability of Lateral GaN Power Field-Effect Transistors;IEEE Transactions on Electron Devices;2019-11
5. New Insights on Device Level TDDB at GHz Speed in Advanced CMOS Nodes;IEEE Transactions on Device and Materials Reliability;2019-06