Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs-Reference-Cited by-同舟云学术

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Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs

Published:2019-03 Issue: Volume: Page:
ISSN:
Container-title:2019 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Makarov A.,Kaczer B.,Roussel Ph.,Chasin A.,Grill A.,Vandemaele M.,Hellings G.,El-Sayed A.-M.,Grasser T.,Linten D.,Tyaginov S.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8712125/8720395/08720584.pdf?arnumber=8720584

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A multi-parameter fitting method based on matrix transformation for device aging modeling;Microelectronics Reliability;2023-03

2. Multi-dimensional Parameter Fitting Method for Device Aging Modeling;2022 IEEE Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics (PrimeAsia);2022-11-11

3. Securing communication by attribute-based authentication in HetNet used for medical applications;EURASIP Journal on Wireless Communications and Networking;2020-07-14

5. Reliability Assessment of GaAs/Al₂O₃ Junctionless FinFET in the Presence of Interfacial Layer Defects and Radiations;IEEE Transactions on Device and Materials Reliability;2020-06

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