Threshold voltage instabilities in D-mode GaN HEMTs for power switching applications-Reference-Cited by-同舟云学术

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Threshold voltage instabilities in D-mode GaN HEMTs for power switching applications

Published:2014-06 Issue: Volume: Page:
ISSN:
Container-title:2014 IEEE International Reliability Physics Symposium
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Author:

Meneghesso G.,Silvestri R.,Meneghini M.,Cester A.,Zanoni E.,Verzellesi G.,Pozzovivo G.,Lavanga S.,Detzel T.,Haberlen O.,Curatola G.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6850132/6860565/06861109.pdf?arnumber=6861109

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The ESD Behavior of D-Mode GaN MIS-HEMT;IEEE Transactions on Electron Devices;2023-12

2. A Monolithic E-Mode GaN Boost Converter IC with Improved Gate Driver;2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia);2023-08-27

3. Efficacy of back barrier engineered Π-gate InAlN/GaN high electron mobility transistors for high-power applications;Journal of Physics D: Applied Physics;2023-07-12

4. Capacitance Temperature Dependence Analysis of GaN-on-Si Power Transistors;Energies;2022-09-26

5. GaN-based power devices: Physics, reliability, and perspectives;Journal of Applied Physics;2021-11-14

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