Analysis of 28 nm SRAM cell stability under mechanical load applied by nanoindentation-Reference-Cited by-同舟云学术

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Analysis of 28 nm SRAM cell stability under mechanical load applied by nanoindentation

Published:2018-03 Issue: Volume: Page:
ISSN:
Container-title:2018 IEEE International Reliability Physics Symposium (IRPS)
language:
Short-container-title:

Author:

Clausner A.¹,Schlipf S.¹,Kurz G.²,Otto M.²,Paul J.²,Giering K.-U.³,Warmuth J.³,Lange A.³,Jancke R.³,Aal A.⁴,Rosenkranz R.¹,Gall M.¹,Zschech E.¹

Affiliation:

1. Fraunhofer Institute for Ceramic Technologies and Systems IKTS, Maria-Reiche-Str. 2, 01109 Dresden, Germany

2. GLOBALFOUNDRIES LLC & Co. KG, Wilschdorfer Landstr. 101, 01109 Dresden, Germany

3. Fraunhofer Institute for Integrated Circuits IIS, Engineering of Adaptive Systems EAS, Zeunerstr. 38, 01069 Dresden

4. Volkswagen AG, Berliner-Ring 2, 38436 Wolfsburg, Germany

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8345372/8353529/08353607.pdf?arnumber=8353607

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of Externally Induced Local Mechanical Stress on Electrical Performance of Decananometer MOSFETs;IEEE Transactions on Electron Devices;2022-09

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