Comparison of the AlxGa1–xN/GaN Heterostructures Grown on Silicon-on-Insulator and Bulk-Silicon Substrates
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/7365508/7346465.pdf?arnumber=7346465
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Modelling of Deformations and Band Diagram of Semiconductor Hetorostructure Silicon-germanium;2023 5th International Conference on Control Systems, Mathematical Modeling, Automation and Energy Efficiency (SUMMA);2023-11-08
2. Improved Off-State Leakage Current and Cutoff Frequency for AlGaN/GaN HEMT by Using Silicon-on-Insulator;ECS Journal of Solid State Science and Technology;2023-02-01
3. Improvements of electrical and thermal characteristics for AlGaN/GaN HEMT grown by metal-organic chemical vapor deposition on silicon-on-insulator (SOI) substrate;Semiconductor Science and Technology;2022-06-01
4. Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration;Micromachines;2021-09-27
5. The Analysis Model of AlGaN/GaN HEMTs with Electric Field Modulation Effect;IETE Technical Review;2019-10-14
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