High-$Q$ Inductors on Locally Semi-Insulated Si Substrate by Helium-3 Bombardment for RF CMOS Integrated Circuits

Author:

Li Ning,Okada Kenichi,Inoue Takeshi,Hirano Takuichi,Bu Qinghong,Narayanan Aravind Tharayil,Siriburanon Teerachot,Sakane Hitoshi,Matsuzawa Akira

Funder

IEEE Foundation

Ministry of Information and Communication

SCOPE

VDEC in collaboration with Cadence Design Systems, Inc., Agilent Technologies Japan, Ltd., and Mentor Graphics, Inc

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. High PAE CMOS Power Amplifier With 44.4% FBW Using Superimposed Dual-Band Configuration and DGS Inductors;IEEE Microwave and Wireless Components Letters;2022-12

2. Dual-Layer Proton Irradiation for Creating Thermally-Stable High-Resistivity Region in Si CMOS Substrate;ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC);2021-09-13

3. Utilization of Multi-Resonant Defected Ground Structure Resonators in the Oscillator Feedback for Phase Noise Reduction of K-Band VCOs in 0.18-$\mu$ m CMOS Technology;IEEE Transactions on Circuits and Systems I: Regular Papers;2020-04

4. 10GHz Varactor-less VCO with Helium-3 Ion Irradiated Inductor;2019 IEEE Asia-Pacific Microwave Conference (APMC);2019-12

5. Electromagnetic Simulation of CMOS On-Chip Spiral Inductors in 5 GHz band;2019 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting;2019-07

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