Effect of SiO2 and SiO2/SiN<italic>x</italic> Passivation on the Stability of Amorphous Indium-Gallium Zinc-Oxide Thin-Film Transistors Under High Humidity-Reference-Cited by-同舟云学术

Effect of SiO₂ and SiO₂/SiN_x Passivation on the Stability of Amorphous Indium-Gallium Zinc-Oxide Thin-Film Transistors Under High Humidity

Published:2015-03 Issue:3 Volume:62 Page:869-874
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Chowdhury Md Delwar Hossain,Mativenga Mallory,Jae Gwang Um ,Mruthyunjaya Ravi K.,Heiler Gregory N.,Tredwell Timothy John,Jin Jang

Funder

Industrial Strategic Technology Development Program (10045269, Development of Soluble TFT and Pixel Formation Materials/Process Technologies for AMOLED TV) funded by MOTIE/KEIT.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/7046469/07029091.pdf?arnumber=7029091

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