The RF performance of long junction active devices using TlCaBaCuO step edge structures-Reference-Cited by-同舟云学术

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The RF performance of long junction active devices using TlCaBaCuO step edge structures

Published:1992-06 Issue:2 Volume:2 Page:74-78
ISSN:1051-8223
Container-title:IEEE Transactions on Appiled Superconductivity
language:
Short-container-title:IEEE Trans. Appl. Supercond.

Author:

Martens J.S.,Hietala V.M.,Zipperian T.E.,Vawter G.A.,Ginley D.S.,Tigges C.P.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx4/77/3769/00139222.pdf?arnumber=139222

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Superconductive amplifying devices using fluxon dynamics;Superconductor Science and Technology;1995-09-01

2. RF characterization of Josephson flux-flow transistors: design, modeling, and on-wafer measurement;IEEE Transactions on Appiled Superconductivity;1995-06

3. Flux‐flow transistors based on long YBa2Cu3O7−δbicrystal grain boundary junctions;Applied Physics Letters;1994-02-28

4. Magnetic field sensitivity of variable thickness microbridges in TBCCO, BSCCO, and YBCO;IEEE Transactions on Appiled Superconductivity;1994

5. Flux flow microelectronics;IEEE Transactions on Applied Superconductivity;1993-03

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