Influence of random alloy fluctuations on the electronic properties of axial In<sub>x</sub>Ga<sub>1–x</sub>N/GaN nanowire heterostructures-Reference-Cited by-同舟云学术

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Influence of random alloy fluctuations on the electronic properties of axial In_xGa_1–xN/GaN nanowire heterostructures

Published:2022-09-12 Issue: Volume: Page:
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Container-title:2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
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Author:

Marquardt Oliver¹,Koprucki Thomas¹,O'Donovan Michael²,Schulz Stefan²,Brandt Oliver³

Affiliation:

1. Weierstraß-Institut für Angewandte Analysis und Stochastik, Leibniz-Institut im Forschungsverbund Berlin e.V., Mohrenstraße 39,Berlin,Germany,10117

2. University College Cork,Department of Physics,Cork,Ireland,T12 Y60

3. Paul-Drude-Institut füur Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5–7,Berlin,Germany,10117

Funder

Deutsche Forschungsgemeinschaft

Science Foundation Ireland

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9894736/9894737/09894777.pdf?arnumber=9894777

Reference11 articles.

1. Polar ( In , Ga ) N / GaN Quantum Wells: Revisiting the Impact of Carrier Localization on the “Green Gap” Problem

2. The microstructure of non-polar a-plane (11 2¯0) InGaN quantum wells

3. Symmetry-adapted calculations of strain and polarization fields in (111)-oriented zinc-blende quantum dots

4. The object-oriented DFT program library S/PHI/nX

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