Low power UTBOX and back plane (BP) FDSOI technology for 32nm node and below-Reference-Cited by-同舟云学术

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Low power UTBOX and back plane (BP) FDSOI technology for 32nm node and below

Published:2011-05 Issue: Volume: Page:
ISSN:
Container-title:2011 IEEE International Conference on IC Design & Technology
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Author:

Fenouillet-Beranger C.,Perreau P.,Tosti L.,Thomas O.,Noel J-P.,Weber O.,Andrieu F.,Casse M.,Garros X.,Benoist T.,Haendler S.,Bajolet A.,Bouf F.,Bourdelle K. K.,Boedt F.,Faynot O.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5773347/5783182/05783186.pdf?arnumber=5783186

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Suitability of applying ultrathin SOI‐based PIN diodes to photodetection of UV wavelength;Electronics Letters;2024-04

2. Leakage Current and Thermal Effects;Industry Standard FDSOI Compact Model BSIM-IMG for IC Design;2019

3. Total dose effect of Al2O3-based metal–oxide–semiconductor structures and its mechanism under gamma-ray irradiation;Semiconductor Science and Technology;2018-10-11

4. Review on analog/radio frequency performance of advanced silicon MOSFETs;Semiconductor Science and Technology;2017-11-16

5. Thermal resistance modeling in FDSOI transistors with industry standard model BSIM-IMG;Microelectronics Journal;2016-10

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