Factors impacting stabilization of tetragonal phase in HfxZr1−xO2 high-k dielectrics
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx5/5159181/5166240/05166272.pdf?arnumber=5166272
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Phase transformation of sputtered hafnium oxide by post annealing treatment and its effect on the amorphous Si-In-Zn-O thin film transistor;Journal of Alloys and Compounds;2022-06
2. Effect of Phase Transformation of Sputtered Hfo2 by Post Annealing Treatment on the Performance of A-Sizo Thin Film Transistor;SSRN Electronic Journal;2022
3. Improving interfacial and electrical properties of HfO2/SiO2/p-Si stacks with N2-plasma-treated SiO2 interfacial layer;Rare Metals;2017-10-26
4. Kink effect for 28 nm n-channel field-effect transistors after decoupled plasma nitridation treatment with annealing temperatures;International Journal of Nanotechnology;2015
5. Emerging Applications for High K Materials in VLSI Technology;Materials;2014-04-10
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