Improving the Endurance of Nonvolatile Flash Memory Using Micro-Grain Poly-Silicon Floating Gate-Reference-Cited by-同舟云学术

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Improving the Endurance of Nonvolatile Flash Memory Using Micro-Grain Poly-Silicon Floating Gate

Published:2010-08 Issue:3 Volume:23 Page:391-399
ISSN:0894-6507
Container-title:IEEE Transactions on Semiconductor Manufacturing
language:
Short-container-title:IEEE Trans. Semicond. Manufact.

Author:

Tuung Luoh ,Ling-Wu Yang ,Tahone Yang ,Kuang-Chao Chen ,Chih-Yuan Lu

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Industrial and Manufacturing Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/66/5536887/05464289.pdf?arnumber=5464289

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Endurance and Data Retention Characteristics of 0.15 μm EEPROM cells;2023 IEEE 23rd International Conference on Nanotechnology (NANO);2023-07-02

2. Experimental and Simulation Studies of Solid-Phase Crystallization of Fluorine-Implanted Amorphous Silicon on Silicon Dioxide;Japanese Journal of Applied Physics;2011-09-20

3. Experimental and Simulation Studies of Solid-Phase Crystallization of Fluorine-Implanted Amorphous Silicon on Silicon Dioxide;Japanese Journal of Applied Physics;2011-09-01

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