High-efficient and Comprehensive Modeling of MFIM Ferroelectric Tunnel Junctions for Non-volatile/Volatile Applications-Reference-Cited by-同舟云学术

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High-efficient and Comprehensive Modeling of MFIM Ferroelectric Tunnel Junctions for Non-volatile/Volatile Applications

Published:2024-05-12 Issue: Volume: Page:1-4
ISSN:
Container-title:2024 IEEE International Memory Workshop (IMW)
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Author:

Li Yu¹,Jiang Hao¹,Yu Jie¹,Zhao Xuanyu¹,Wang Xiaodong¹,Liu Qihan¹,Wei Yingfen¹,Liu Qi¹,Liu Ming¹

Affiliation:

1. Fudan University,State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System,Shanghai,China,200433

Funder

Chinese Academy of Sciences

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10536936/10536916/10536918.pdf?arnumber=10536918

Reference11 articles.

1. Revival of Ferroelectric Memories Based on Emerging Fluorite‐Structured Ferroelectrics

2. Reliability of HfO₂-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges

3. Energy Efficient and Robust Reservoir Computing System Using Ultrathin (3.5 nm) Ferroelectric Tunneling Junctions for Temporal Data Learning;Yu

4. Compact modelling of ferroelectric tunnel memristor and its use for neuromorphic simulation

5. Scalability Study on Fcrroclcctric-HfO2 Tunnel Junction Memory Based on Non-equilibrium Green Function Method with Self-consistent Potential

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