A 3.75Mb Embedded RRAM IP on 40nm High-Voltage CMOS Technology-Reference-Cited by-同舟云学术

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A 3.75Mb Embedded RRAM IP on 40nm High-Voltage CMOS Technology

Published:2024-05-12 Issue: Volume: Page:1-4
ISSN:
Container-title:2024 IEEE International Memory Workshop (IMW)
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Author:

He Yuan¹,Ma Chengxiang¹,Ma Xiangchao¹,Huang Yilong¹,Zheng Qianze¹,Xi Yue¹,Wei Qiumeng¹,Li Jianing¹,He Xiaodong²,Wu Yongqin²,Bu Weihai²,Zheng Kai²,Kang Jin²,Tang Jianshi¹,Gao Bin¹,Wu Dong¹,Qian He¹,Wu Huaqiang¹

Affiliation:

1. Tsinghua University,School of Integrated Circuits, Beijing Advanced Innovation Center for Integrated Circuits,Beijing

2. Semiconductor Technology Innovation Center (Beijing),Beijing,China

Funder

National Natural Science Foundation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10536936/10536916/10536978.pdf?arnumber=10536978

Reference4 articles.

1. Design Challenges and Solutions of Emerging Nonvolatile Memory for Embedded Applications

2. 28nm Data Memory with Embedded RRAM Technology in Automotive Microcontrollers

3. Demonstration of High Endurance Capability on Mega-Bit RRAM Macro and Model of ppm Level Failures

4. Highly Reliable 40nm Embedded Dual-Interface-Switching RRAM Technology for Display Driver IC Applications

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