Design optimization of high-performance low-temperature 0.18 μm MOSFETs with low-impurity-density channels at supply voltage below 1 V
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/16/18018/00830998.pdf?arnumber=830998
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