Microstructure-Property Relationships in Epitaxial Cu(In, Ga)Se<sub>2</sub> Solar-Cell Absorbers-Reference-Cited by-同舟云学术

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Microstructure-Property Relationships in Epitaxial Cu(In, Ga)Se₂ Solar-Cell Absorbers

Published:2023-06-11 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE 50th Photovoltaic Specialists Conference (PVSC)
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Author:

Abou-Ras Daniel¹,Nishinaga Jiro²,Sugaya Takeyoshi²,Kamikawa-Shimizu Yukiko²,Bloeck Ulrike¹,Prell Henrik¹,Thomas Sinju¹,Tovar Michael¹,Wargulski Dan R.¹,Guthrey Harvey³,Trimby Pat⁴,Winkelmann Aimo⁵,Ishizuka Shogo²

Affiliation:

1. Helmholtz-Zentrum Berlin für Materialien und Energie GmbH,Berlin,Germany,14109

2. National Institute of Advanced Industrial Science and Technology,Tsukuba,Ibaraki,Japan

3. National Renewable Energy Laboratory (NREL),Golden,CO,USA

4. Oxford Instruments Nanoanalysis, High Wycombe,Buckinghamshire,UK,HP12 3SE

5. ST Development GmbH,Paderborn,Germany,33102

Funder

U.S. Department of Energy

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10359507/10359504/10359864.pdf?arnumber=10359864

Reference3 articles.

1. Single-crystal Cu(In,Ga)Se2 solar cells grown on GaAs substrates

2. Interactions of dislocations and solute atoms;Cottrell,1954

3. Optoelectronic Inactivity of Dislocations in Cu(In,Ga)Se 2 Thin Films

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