Prediction of Electronic parameters of Carbon Nanotube random network Field-effect Transistors under liquid gated conditions using a machine learning approach

Author:

Murugathas Thanihaichelvan1,R Veena2,Plank Natalie O.V.3,Keerththinaathan Pirunthan4,I Petra M.2,Mohandas Prabu5

Affiliation:

1. University of Jaffna,Faculty of Science,Department of Physics,Jaffna,Sri Lanka,40000

2. Universiti Brunei Darussalam,Faculty of Integrated Technologies,Brunei,BE1410

3. Victoria University of Wellington,School of Chemical and Physical Sciences,Wellington,New Zealand,6021

4. University of Jaffna,Faculty of Technology,Department of Electrical technology,Kilinochi,Sri Lanka,40000

5. National Institute of Technology Calicut,Intelligent Computing Lab,Department of Computer Science and Engineering,Kerala,India

Publisher

IEEE

Reference15 articles.

1. Electrostatic gating in carbon nanotube aptasensors

2. Deep Learning Assisted Compact Modeling of Nanoscale Transistor;kam,2021

3. Machine Learning Approach for Predicting the Effect of Statistical Variability in Si Junctionless Nanowire Transistors

4. Ten Lectures on Statistical and Structural Pattern Recognition

5. Nonlinear prediction of chaotic time series using support vector machines. In: Neural Networks for Signal Processing [1997] VII;mukherjee;Proceedings of the 1997 IEEE Workshop,1997

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