A power SIPOS MISS device
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx1/16/152/00002562.pdf?arnumber=2562
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. A fast-switching low-loss field-stop IGBT with dual control gate of SIPOS material;Applied Physics Letters;2024-07-08
2. Coupled drift-diffusion/quantum transmitting boundary method simulations of thin oxide devices with specific application to a silicon based tunnel switch diode;IEEE Transactions on Electron Devices;2000-05
3. Properties of fluorinated amorphous silicon-nitrogen-oxygen alloy (a-SiNxOy:H) deposited by plasma-enhanced chemical vapor deposition;Journal of Non-Crystalline Solids;1995-12
4. Effects of nitrogen trifluoride on the properties of plasma-enhanced chemical-vapor-deposited semi-insulating polysilicon films;Thin Solid Films;1995-03
5. Semi-insulating polysilicon heterojunctions on silicon;Microelectronics Journal;1991-11
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