Development of a SPICE modelling strategy for power devices in GaN technology-Reference-Cited by-同舟云学术

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Development of a SPICE modelling strategy for power devices in GaN technology

Published:2021-10-13 Issue: Volume: Page:
ISSN:
Container-title:IECON 2021 – 47th Annual Conference of the IEEE Industrial Electronics Society
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Author:

Bottaro Enrico,Cacciato Mario,Raffa Alessandra,Rizzo Santi Agatino,Salerno Nunzio,Veneziano Pier Paolo

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9588332/9589036/09589710.pdf?arnumber=9589710

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Power Analysis of Semiconductor Devices in Multi-Phase Traction Inverter Topologies Applicable in the Automotive Industry;Communications - Scientific letters of the University of Zilina;2024-07-11

2. Evaluation of the Efficiency Performance of 3-Phase and 6-Phase Voltage Source Inverter;2024 ELEKTRO (ELEKTRO);2024-05-20

3. An Overview of Strengths and Weaknesses in Using MOSFET Experience for Modeling GaN HEMT;Energies;2023-09-12

4. Node Ringing Reduction of Synchronous Buck Converter;Communications - Scientific letters of the University of Zilina;2023-07-11

5. Circuit Models of Power MOSFETs Leading the Way of GaN HEMT Modelling—A Review;Energies;2022-05-07

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