W-Band Rectenna Coupled With Low-Barrier Mott Diode-Reference-Cited by-同舟云学术

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W-Band Rectenna Coupled With Low-Barrier Mott Diode

Published:2016-08 Issue:8 Volume:26 Page:637-639
ISSN:1531-1309
Container-title:IEEE Microwave and Wireless Components Letters
language:
Short-container-title:IEEE Microw. Wireless Compon. Lett.

Author:

Kapilevich Boris,Shashkin Vladimir,Litvak Boris,Yemini Gil,Etinger Ariel,Hardon Danny,Pinhasi Yosef

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Link

http://xplorestaging.ieee.org/ielx7/7260/7534959/07517354.pdf?arnumber=7517354

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Efficiency of Sub-THz-to-DC Energy Conversion by Means of a Silicon Detector;Bulletin of the Russian Academy of Sciences: Physics;2024-02

2. All-epitaxial Al/AlGaN/GaN low-barrier Schottky diodes;Applied Physics Letters;2022-12-05

3. A generalized approach to the description of the detection mechanism of the uncooled millimeter- and submillimeter-wave rectification detectors;2022 IEEE 8th All-Russian Microwave Conference (RMC);2022-11-23

4. Comparison of different Machine Learning techniques for PCE estimation of MMWave Energy Harvesting Rectifier devices;2021 Third South American Colloquium on Visible Light Communications (SACVLC);2021-11-11

5. Modeling the Response of a Microwave Low-Barrier Uncooled Mott Diode to the Action of Heavy Ions of Outer Space and Femtosecond Laser Pulses;Semiconductors;2021-10

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