RF-MEMS Tuned GaN HEMT based Cavity Oscillator for X-band-Reference-Cited by-同舟云学术

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RF-MEMS Tuned GaN HEMT based Cavity Oscillator for X-band

Published:2017-01 Issue:1 Volume:27 Page:46-48
ISSN:1531-1309
Container-title:IEEE Microwave and Wireless Components Letters
language:
Short-container-title:IEEE Microw. Wireless Compon. Lett.

Author:

Horberg Mikael,Emanuelsson Thomas,Ligander Per,Lai Szhau,Zirath Herbert,Kuylenstierna Dan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Link

http://xplorestaging.ieee.org/ielx7/7260/7809128/07797122.pdf?arnumber=7797122

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of Q-Factor for AM-SLM Cavity Based Resonators Using Surface Roughness Models;IEEE Journal on Multiscale and Multiphysics Computational Techniques;2024

2. High Electron Mobility Transistor: Physics-Based TCAD Simulation and Performance Analysis;HEMT Technology and Applications;2022-06-24

3. A Simple and Effective Method for the Resonance Frequencies Identification of the Complex Cavities Within Reverberation Chamber;IEEE Microwave and Wireless Components Letters;2020-08

4. Analysis of a MEMS Tuned Cavity Oscillator on $X$ -Band;IEEE Transactions on Microwave Theory and Techniques;2017-09

5. High Electron Mobility Transistors: Performance Analysis, Research Trend and Applications;Different Types of Field-Effect Transistors - Theory and Applications;2017-06-07

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