A 1V 17.9dBm 60GHz power amplifier in standard 65nm CMOS
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/5428240/5433812/05433870.pdf?arnumber=5433870
Cited by 59 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A 180–194-GHz Power Amplifier Co-Designed With a Power-Combining End-Fed Slot Antenna Array in 65-nm CMOS;IEEE Transactions on Microwave Theory and Techniques;2024
2. Research on Common-Mode Stability of Ka-Band Differential Common-Source Amplifiers;2022 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP);2022-11-27
3. An 84GHz DAT-based power amplifier with 18dBm <i>P<sub>sat</sub></i> utilizing an ultra-symmetric dual-differential power divider;IEICE Electronics Express;2022-07-10
4. A novel stair‐finger grid type transistor for high‐performance millimeter‐wave power amplifier;Microwave and Optical Technology Letters;2022-07-09
5. A 54-GHz 23.3%-PAE CMOS power amplifier using dual-gated transistors;IEICE Electronics Express;2021-11-25
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