A fully integrated triple-band CMOS power amplifier for WCDMA mobile handsets-Reference-Cited by-同舟云学术

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A fully integrated triple-band CMOS power amplifier for WCDMA mobile handsets

Published:2012-02 Issue: Volume: Page:
ISSN:
Container-title:2012 IEEE International Solid-State Circuits Conference
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Author:

Kanda Kouichi,Kawano Yoichi,Sasaki Takao,Shirai Noriaki,Tamura Tetsuro,Kawai Shigeaki,Kudo Masahiro,Murakami Tomotoshi,Nakamoto Hiroyuki,Hasegawa Nobumasa,Kano Hideki,Shimazui Nobuhiro,Mineyama Akiko,Oishi Kazuaki,Shima Masashi,Tamura Naoyoshi,Suzuki Toshihide,Mori Toshihiko,Niratsuka Kimitoshi,Yamaura Shinji

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6171933/6176863/06176881.pdf?arnumber=6176881

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Compact Dual-Band Digital Polar Doherty Power Amplifier Using Parallel-Combining Transformer;IEEE Journal of Solid-State Circuits;2019-06

2. A 2.4 GHz CMOS Class-F Power Amplifier With Reconfigurable Load-Impedance Matching;IEEE Transactions on Circuits and Systems I: Regular Papers;2019-01

3. A Receive-Band-Noise Estimation Method and Its Application to a WCDMA Band 11/21 GaAs-BiFET MMIC Power Amplifier Module;IEEE Transactions on Microwave Theory and Techniques;2016-10

4. Analysis and design of class-O RF power amplifiers for wireless communication systems;Analog Integrated Circuits and Signal Processing;2016-08-03

5. Design and Measurements of Building Blocks Supporting a 1.9-GHz-Band BiFET MMIC Power Amplifier for WCDMA Handsets;IEICE Transactions on Electronics;2016

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