25.2 A 1.2V 8Gb 8-channel 128GB/s high-bandwidth memory (HBM) stacked DRAM with effective microbump I/O test methods using 29nm process and TSV-Reference-Cited by-同舟云学术

25.2 A 1.2V 8Gb 8-channel 128GB/s high-bandwidth memory (HBM) stacked DRAM with effective microbump I/O test methods using 29nm process and TSV

Published:2014-02 Issue: Volume: Page:
ISSN:
Container-title:2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC)
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Author:

Lee Dong Uk,Kim Kyung Whan,Kim Kwan Weon,Kim Hongjung,Kim Ju Young,Park Young Jun,Kim Jae Hwan,Kim Dae Suk,Park Heat Bit,Shin Jin Wook,Cho Jang Hwan,Kwon Ki Hun,Kim Min Jeong,Lee Jaejin,Park Kun Woo,Chung Byongtae,Hong Sungjoo

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6747109/6757318/06757501.pdf?arnumber=6757501

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