4.5 A 1.8e<inf>rms</inf>− temporal noise over 110dB dynamic range 3.4µm pixel pitch global shutter CMOS image sensor with dual-gain amplifiers, SS-ADC and multiple-accumulation shutter-Reference-Cited by-同舟云学术

4.5 A 1.8erms− temporal noise over 110dB dynamic range 3.4µm pixel pitch global shutter CMOS image sensor with dual-gain amplifiers, SS-ADC and multiple-accumulation shutter

Published:2017-02 Issue: Volume: Page:
ISSN:
Container-title:2017 IEEE International Solid-State Circuits Conference (ISSCC)
language:
Short-container-title:

Author:

Kobayashi Masahiro,Onuki Yusuke,Kawabata Kazunari,Sekine Hiroshi,Tsuboi Toshiki,Matsuno Yasushi,Takahashi Hidekazu,Koizumi Toru,Sakurai Katsuhito,Yuzurihara Hiroshi,Inoue Shunsuke,Ichikawa Takeshi

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7866667/7870233/07870267.pdf?arnumber=7870267

Cited by 30 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 3.36-μm-Pitch SPAD Photon-Counting Image Sensor Using a Clustered Multi-Cycle Clocked Recharging Technique With an Intermediate Most-Significant-Bit Readout;IEEE Journal of Solid-State Circuits;2024-04

2. A Low-Noise Area-Efficient Column-Parallel ADC With an Input Triplet for a 120-dB High Dynamic Range CMOS Image Sensor;IEEE Transactions on Very Large Scale Integration (VLSI) Systems;2023-12

3. A 216 × 216 Global-Shutter CMOS Image Sensor With Embedded Analog Memory and Automatic Exposure Control for Under-Display Optical Fingerprint Sensing Applications;IEEE Transactions on Circuits and Systems I: Regular Papers;2023-03

4. A 256 × 256 CMOS image sensor with differential readout and data converter circuits;International Journal of Circuit Theory and Applications;2023-02-26

5. High-Speed Multilevel Binary Imaging CMOS Image Sensor for Object Feature Extraction;IEEE Sensors Journal;2022-08-15