A 40nm CMOS highly linear 0.4-to-6GHz receiver resilient to 0dBm out-of-band blockers-Reference-Cited by-同舟云学术

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A 40nm CMOS highly linear 0.4-to-6GHz receiver resilient to 0dBm out-of-band blockers

Published:2011-02 Issue: Volume: Page:
ISSN:
Container-title:2011 IEEE International Solid-State Circuits Conference
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Author:

Borremans Jonathan,Mandal Gunjan,Giannini Vito,Sano Tomohiro,Ingels Mark,Verbruggen Bob,Craninckx Jan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5740653/5746170/05746220.pdf?arnumber=5746220

Cited by 34 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A wideband receiver front-end with low noise and high linearity by exploiting reconfigurable dual paths in 180 nm CMOS;Modern Physics Letters B;2021-02-09

2. A Wideband Dual-path Reconfigurable Receiver Front-end in 180 nm CMOS;2020 IEEE International Conference on Semiconductor Electronics (ICSE);2020-07

3. A Survey of Self-Interference in LTE-Advanced and 5G New Radio Wireless Transceivers;IEEE Transactions on Microwave Theory and Techniques;2020-03

4. A 0.1–5.0 GHz flexible SDR receiver with digitally assisted calibration in 65 nm CMOS;Microelectronics Journal;2018-02

5. Design and analysis of a low-noise saw-less receiver front-end resistant to strong out-of-band blocker;Analog Integrated Circuits and Signal Processing;2017-09-11

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