14.1 A 0.9V 20.9dBm 22.3%-PAE E-band power amplifier with broadband parallel-series power combiner in 40nm CMOS-Reference-Cited by-同舟云学术

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14.1 A 0.9V 20.9dBm 22.3%-PAE E-band power amplifier with broadband parallel-series power combiner in 40nm CMOS

Published:2014-02 Issue: Volume: Page:
ISSN:
Container-title:2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC)
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Author:

Zhao Dixian,Reynaert Patrick

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6747109/6757318/06757420.pdf?arnumber=6757420

Cited by 43 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 13dBm 25.7% PAE 25.3-dB gain E-band power amplifier in 40nm CMOS technology;IEICE Electronics Express;2024-01-25

2. A 13dBm 25.7% PAE 25.3-dB Gain E-Band Power Amplifier In 40nm CMOS Technology;IEICE ELECTRON EXPR;2023

3. Single Antenna and No Circulator Full-Duplex With 52 dB Wideband Self-Interference Suppression;IEEE Transactions on Circuits and Systems I: Regular Papers;2023-09

4. A High-Efficiency E-band Power Amplifier with Optimized Output Matching Network in a 28-nm Bulk CMOS;IEEE Transactions on Circuits and Systems II: Express Briefs;2023

5. An 84GHz DAT-based power amplifier with 18dBm <i>P<sub>sat</sub></i> utilizing an ultra-symmetric dual-differential power divider;IEICE Electronics Express;2022-07-10

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