A 3bit/cell 32Gb NAND flash memory at 34nm with 6MB/s program throughput and with dynamic 2b/cell blocks configuration mode for a program throughput increase up to 13MB/s

Author:

Marotta G.G.,Macerola A.,D'Alessandro A.,Torsi A.,Cerafogli C.,Lattaro C.,Musilli C.,Rivers D.,Sirizotti E.,Paolini F.,Imondi G.,Naso G.,Santin G.,Botticchio L.,De Santis L.,Pilolli L.,Gallese M.L.,Incarnati M.,Tiburzi M.,Conenna P.,Peru S.,Moschiano V.,Di Francesco W.,Goldman M.,Haid C.,Di Cicco D.,Orlandi D.,Rori F.,Rossini M.,Vali T.,Ghodsi R.,Roohparvar F.

Publisher

IEEE

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