The future of ferroelectric memories-Reference-Cited by-同舟云学术

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The future of ferroelectric memories

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Container-title:2000 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.00CH37056)
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Author:

Paz de Araujo C.,McMillan L.,Joshi V.,Solayappan N.,Lim M.,Arita K.,Moriwaki N.,Hirano H.,Baba T.,Shimada Y.,Sumi T.,Fujii E.,Otsuki T.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6780/18154/00839779.pdf?arnumber=839779

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Memory properties of metal/ferroelectric/semiconductor and metal/ferroelectric/insulator/semiconductor structures using rf sputtered ferroelectric Sr 0.8 Bi 2.5 Ta 1.2 Nb 0.8 O 9 thin films;Journal of the European Ceramic Society;2004-07

2. A quasi-matrix ferroelectric memory for future silicon storage;IEEE Journal of Solid-State Circuits;2002-11

3. The role of grain-boundary on the hydrogen-induced degradation in thin-film ferroelectric capacitors;IEEE Electron Device Letters;2002-09

4. System on a chip (SoC) and design methodology challenges;Microelectronic Engineering;2000-12

5. Where does memory go in the 21C? (Evolution and revolution of memory technology);2000 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.00CH37103)

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