A Novel Lateral Reverse Conducting Trench IGBT on SOI employing NPN bipolar with small area penalty and switching energy loss
Author:
Affiliation:
1. Waseda University,Graduate School of Information, Production and Systems,Japan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9797886/9797892/09798192.pdf?arnumber=9798192
Reference5 articles.
1. Simulation Study of a Novel Snapback Free Reverse-Conducting SOI-LIGBT With Embedded P-Type Schottky Barrier Diode
2. Snapback‐free reverse‐conducting IGBT with low turnoff loss
3. IGBT History, State-of-the-Art, and Future Prospects
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1. A fast-switching and ultra low-loss snapback-free reverse-conducting SOI-LIGBT with Adjustable Carrier Technology;Microelectronics Journal;2024-09
2. Noval carrier accumulation reverse-conducting lateral insulated gate bipolar transistor;Acta Physica Sinica;2024
3. Repetitive ESD-Induced Electrical Degradation and Optimization for High-Voltage SOI-LIGBT as Output Device;IEEE Transactions on Electron Devices;2023-09
4. Unipolar-Turn-Off Lateral Insulated-Gate Bipolar Transistor With On-Chip Biasing Circuit for Injection Control;IEEE Transactions on Electron Devices;2023-09
5. Novel trench type complementary LIGBTs with common double drift layers for simple process and improvement in switching characteristics;2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2023-03-07
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