Highly Reliable 1.5-${\rm \mu}\hbox{m}$ DFB Laser With High-Mesa SIBH Structure-Reference-Cited by-同舟云学术

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Highly Reliable 1.5-${\rm \mu}\hbox{m}$ DFB Laser With High-Mesa SIBH Structure

Published:2007-03 Issue:3 Volume:54 Page:456-461
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Takeshita Tatsuya,Tadokoro Takashi,Iga Ryuzo,Tohmori Yuichi,Yamamoto Mitsuo,Sugo Mitsuru

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/4114830/04114859.pdf?arnumber=4114859

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improvement of Power and Efficiency of High-Mesa Semi-Insulating InP: Fe Buried Heterostructure Lasers with Wide Bandgap Layers;Photonics;2023-09-29

2. Interior Degradation Analysis of Distributed Feedback Laser Using Optical-Beam-Induced Current;IEEE Transactions on Device and Materials Reliability;2014-12

3. Ingredients;Diode Lasers and Photonic Integrated Circuits;2012-02-09

4. Optical Transmitters;Fiber-Optic Communication Systems;2011-02-25

5. Degradation Analysis of InP Buried Heterostructure Layers in Lasers Using Optical-Beam-Induced-Current Technique;IEEE Transactions on Device and Materials Reliability;2010-03

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