The Sensitive Region of Displacement Damage in LPNP Induced by Various Charged Particles-Reference-Cited by-同舟云学术

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The Sensitive Region of Displacement Damage in LPNP Induced by Various Charged Particles

Published:2019-09 Issue: Volume: Page:
ISSN:
Container-title:2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)
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Author:

Li Xingji¹,Yang Jianqun¹,Barnaby Hugh J.²,Li Pengwei¹,Sun Xiangsong¹,Dong Lei¹,Galloway Kenneth F.³,Schrimpf R. D.³,Fleetwood D. M.³

Affiliation:

1. School of Materials Science and Engineering, Harbin Institute of Technology,Harbin,China,150001

2. Arizona State University, School of Electrical, Computer and Energy Engineering,Tempe,AZ,USA,85287-5706

3. Vanderbilt University,Department of Electrical Engineering and Computer Science,Nashville,TN,USA,37235

Funder

Science Challenge Project

National Natural Science Foundation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9745606/9745637/09745712.pdf?arnumber=9745712

Reference18 articles.

1. Limits to the application of NIEL for damage correlation

2. The equivalence of displacement damage in silicon bipolar junction transistors

3. Synergistic Effect of Ionization and Displacement Damage in NPN Transistors Caused by Protons With Various Energies

4. Research on the Combined Effects of Ionization and Displacement Defects in NPN Transistors Based on Deep Level Transient Spectroscopy

5. Charge separation for bipolar transistors

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