Behavior of Damaged Sites Introduced by SEGR in Silicon Carbide Power MOSFETs
Author:
Affiliation:
1. Japan Aerospace Exploration Agency, Tsukuba Space Center,Tsukuba,Ibaraki,Japan,305-8505
2. National Institutes for Quantum and Radiological Science and Technology,Takasaki,Gunma,Japan,370-1292
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9745606/9745637/09745719.pdf?arnumber=9745719
Reference12 articles.
1. Heavy Ion Induced Degradation in SiC Schottky Diodes: Incident Angle and Energy Deposition Dependence
2. Terrestrial Neutron-Induced Single-Event Burnout in SiC Power Diodes
3. Single-Event Burnout Mechanisms in SiC Power MOSFETs
4. Rediscovery of Single-Event Gate Rupture Mechanism in Power MOSFETs
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