Towards a Characterization of Vulnerability of XCR4C ASIC on Heavy-Ion Induced Transient Events-Reference-Cited by-同舟云学术

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Towards a Characterization of Vulnerability of XCR4C ASIC on Heavy-Ion Induced Transient Events

Published:2019-09 Issue: Volume: Page:
ISSN:
Container-title:2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)
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Author:

Li Bo¹,Lu Bo²,Jia Huo²,Chen Yong²,Zhang Fengyuan¹,SU Zexin¹,Gao Jantou¹,Wang Chunlin¹,Zhao Wenxin¹,Liu Hainan¹

Affiliation:

1. Key Laboratory of Silicon Device and Technology, Institute of Microelectronics, Chinese Academy of Sciences,Beijing,China,100029

2. Key Laboratory of Particle Astrophysics, Institute of High Energy Physics, Chinese Academy of Sciences,Beijing,China,100049

Funder

National Natural Science Foundation of China

State Key Laboratory of Particle Detection and Electronics

Youth Innovation Promotion Association, Chinese Academy of Sciences

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9745606/9745637/09745654.pdf?arnumber=9745654

Reference10 articles.

1. Design of a CDS ASIC for Multireadout X-Ray CCDs With a 0.032% INL

2. XCR4C: A rad-hard full-function CDS ASIC for X-ray CCD Applications

3. Single Event Effects Test Method And Guidelines;ESA/SCC Basic Specification No 25100,2014

4. Radiation Hardness Assurance Testing of Microelectronic Devices and Integrated Circuits: Test Guideline for Proton and Heavy Ion Single-Event Effects

5. CDS circuit with BLA function for X‐ray CCD applications

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