Hot-carrier aging of the MOS transistor in the presence of spin-on glass as the interlevel dielectric
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx1/55/2524/00075737.pdf?arnumber=75737
Cited by 37 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Temporary Bonding and De-Bonding for Multichip-to-Wafer 3D Integration Process Using Spin-on Glass and Hydrogenated Amorphous Si;2017 IEEE 67th Electronic Components and Technology Conference (ECTC);2017-05
2. Silicate Spin-on-Glass as an Overcoat Layer for SiO2 Ridge Waveguides;CLEO: 2015;2015
3. Chemical bond structure and MOSFET device damages of electron beam cured siloxane spin-on-dielectric films;Electronic Materials Letters;2014-11
4. Hydrogen redistribution in CVD SiO2 during post-oxidation annealing investigated by SIMS;Applied Surface Science;2004-06
5. Plasma-Enhanced Chemical Vapor Deposition of FSG and a-C:F Low-k Materials;Springer Series in Advanced Microelectronics;2003
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