Design of GaN HEMT Class AB Amplifier at 4.48 GHz for 5G Connectivity
Author:
Affiliation:
1. Coimbatore Institute of Technology,Electronic and Communication Engineering,Coimbatore,Tamil Nadu,India,641014
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx8/10543255/10544376/10544570.pdf?arnumber=10544570
Reference12 articles.
1. 2.45 GHz GaN HEMT Class-AB RF power amplifier design for wireless communication systems;Monprasert;Electrical Engineering/Electronics Computer Telecommunications and Information Technology (ECTI-CON),2010
2. GaN HEMT power amplifier design for 2.45 GHz wireless applications
3. Design and measurement analysis of Class AB power amplifier
4. A Broadband High-Efficiency Continuous Class-AB Power Amplifier for Millimeter-Wave 5G and SATCOM Phased-Array Transmitters
5. A 0.8 mm2 Sub-GHz GaAs HBT Power Amplifier for 5G Application Achieving 57.5% PAE and 28.5 dBm Maximum Linear Output Power
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