An 80-Gbit/s multiplexer IC using InAlAs/InGaAs/InP HEMTs
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx4/4/15419/00711330.pdf?arnumber=711330
Cited by 37 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. GaAs- and InP-based high electron mobility transistors;Reference Module in Materials Science and Materials Engineering;2024
2. A critical review of design and fabrication challenges in InP HEMTs for future terahertz frequency applications;Materials Science in Semiconductor Processing;2021-06
3. InP high electron mobility transistors for submillimetre wave and terahertz frequency applications: A review;AEU - International Journal of Electronics and Communications;2018-09
4. Suppressing the 1/fnoise and noise figure of InP-based high electron mobility transistors;Japanese Journal of Applied Physics;2014-03-27
5. GaAs- and InP-Based High-Electron-Mobility Transistors;Comprehensive Semiconductor Science and Technology;2011
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