Photovoltaic Effects of InGaN/GaN Double Heterojunctions With p-GaN Nanorod Arrays-Reference-Cited by-同舟云学术

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Photovoltaic Effects of InGaN/GaN Double Heterojunctions With p-GaN Nanorod Arrays

Published:2010-12 Issue:12 Volume:31 Page:1422-1424
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Zhang Dong-Yan,Zheng Xin-He,Tang Long-Juan,Dong Jian-Rong,Wang Hui,Yang Hui

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/5635414/05599957.pdf?arnumber=5599957

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hydrogen passivation: a proficient strategy to enhance the optical and photoelectrochemical performance of InGaN/GaN single-quantum-well nanorods;Nanotechnology;2020-09-07

2. Study on the self-absorption of InGaN quantum wells at high photon density;Applied Optics;2020-05-26

3. Review—Recent Advances and Challenges in Indium Gallium Nitride (InxGa1-xN) Materials for Solid State Lighting;ECS Journal of Solid State Science and Technology;2019-11-07

4. Indium‐rich InGaN/GaN solar cells with improved performance due to plasmonic and dielectric nanogratings;Energy Science & Engineering;2019-09-14

5. High-performance Core/Shell InGaN/GaN Radial Multi-quantum-well Nanowire Solar Cells Non-catalytically Grown on Si Wafers;Journal of the Korean Physical Society;2018-10

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