Modeling of SiC IGBT Turn-Off Behavior Valid for Over 5-kV Circuit Simulation

Author:

Miyake Masataka,Ueno Masaya,Feldmann Uwe,Mattausch Hans Jürgen

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 18 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Performance limits of high voltage press-pack SiC IGBT and SiC MOSFET devices;Power Electronic Devices and Components;2022-10

2. Comparative Performance Study of Hybrid Si/SiC Insulated-Gate Bipolar Transistors;2022 IEEE 7th Forum on Research and Technologies for Society and Industry Innovation (RTSI);2022-08-24

3. A Survey on Modeling of SiC IGBT;2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia);2021-08-25

4. A Review of SiC IGBT: Models, Fabrications, Characteristics, and Applications;IEEE Transactions on Power Electronics;2021-02

5. A Datasheet Driven Unified Si/SiC Compact IGBT Model for N-Channel and P-Channel Devices;IEEE Transactions on Power Electronics;2019-09

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