Characterization and Modeling of Cryogenic Ultralow-Noise InP HEMTs-Reference-Cited by-同舟云学术

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Characterization and Modeling of Cryogenic Ultralow-Noise InP HEMTs

Published:2013-01 Issue:1 Volume:60 Page:206-212
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Schleeh J.,Rodilla H.,Wadefalk N.,Nilsson P.,Grahn J.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/6387647/06365264.pdf?arnumber=6365264

Cited by 32 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of Channel Structure on the Subthreshold Swing of InGaAs HEMTs at Cryogenic Temperatures Down to 4 K;IEEE Transactions on Electron Devices;2024-05

2. Impact of the channel thickness fluctuation on the subthreshold swing of InGaAs HEMTs at cryogenic temperature down to4K for ultra-low power LNAs;2023 International Electron Devices Meeting (IEDM);2023-12-09

3. 100-μW Cryogenic HEMT LNAs for Quantum Computing;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18

4. Modeling of 50-nm Metamorphic HEMTs for Cryogenic Ultra-Low-Power Operation;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18

5. The Effect of Cryogenic Temperatures on the Lateral Heat Spreading in InGaAs/InP HEMTs;IEEE Transactions on Electron Devices;2023-08

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